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Preliminary
SemiWell Semiconductor Bi-Directional Triode Thyristor
Symbol
BT134-F
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) High Commutation dv/dt
2.T2

3.Gate
1.T1
General Description
This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.
TO-126
3
2
1
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG
( TJ = 25C unless otherwise specified ) Condition Ratings
600 TC = 104 C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t = 10ms 4 25/27 3.1 5 Over any 20ms period 0.5 2 5 - 40 ~ 125 - 40 ~ 150
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature
Units
V A A A2 s W W A V C C
Nov, 2003. Rev. 0
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/6
BT134-F
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage Gate Trigger Current I -GT3 I+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Gate Trigger Voltage Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 C, VD = 1/2 VDRM TJ = 125 C, [di/dt]c = -0.75 A/ms, VD=2/3 VDRM VD = 6 V, RL=10 0.2 5.0 5 1.5 2.5 3.5 V VD = 6 V, RL=10 25 70 1.5 1.5 V
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 C IT = 5 A, Inst. Measurement
Ratings Min.

Typ.

Max.
0.5 1.7 25 25
Unit
IDRM VTM I+GT1 I -GT1
mA V
mA
V/
mA C/W
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BT134-F
Fig 1. Gate Characteristics
10
1
Fig 2. On-State Voltage
10
2
VGK = 5V PGK = 5W
On-State Current [A]
PG(AV) = 0.5W
Gate Voltage [V]
10
1
25 IGM=2A
10
0
125 C 10
0
o
25 C
o
VGD = 0.2V
10
-1
10
1
-1
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
7 6 130
Fig 4. On State Current vs. Allowable Case Temperature

Power Dissipation [W]
= 150
o o
5
360
= 120 = 90 = 60 = 30
o
o
2
= 180
o
Allowable Case Temperature [ C]
120
4 3 2 1 0 0
: Conduction Angle
o o
110
2
= 30 = 60 = 90
o o
360
o o o
= 120
100 0
: Conduction Angle
= 150 o = 180
1
2
3
4
5
1
2
3
4
5
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
Fig 6. Gate Trigger Voltage vs. Junction Temperature
35
10
30
Surge On-State Current [A]
25 60Hz
o
20
VGT (25 C)
VGT (t C)
o
1
15 50Hz
10
5
0 0 10
10
1
10
2
10
3
0.1 -50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
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BT134-F
Fig 7. Gate Trigger Current vs. Junction Temperature Fig 8. Transient Thermal Impedance
10
10
1
IGT (25 C)
I I
1
+ GT1 GT1 GT3
Transient Thermal Impedance [ C/W]
IGT (t C)
o
o
o
I
10
0
I
+ GT3
0.1 -50
10 0 50 100
o
-1
150
10
-3
10
-2
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10
10

6V

A

A
6V
6V
A

RG
6V
A
V
RG
V
RG
V
V
RG
Test Procedure
Test Procedure
Test Procedure
Test Procedure
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BT134-F
TO-126 Package Dimension mm Min. 7.5 10.8 14.2 2.7 3.8 2.5 1.2 2.3 4.6 0.48 0.7 1.4 3.2 0.62 0.86 0.019 0.028 0.055 0.126 1.5 0.047 0.091 0.181 0.024 0.034 Typ. Max. 7.9 11.2 14.7 2.9 Min. 0.295 0.425 0.559 0.106 0.150 0.098 0.059 Inch Typ. Max. 0.311 0.441 0.579 0.114
Dim. A B C D E F G H I J K L
A E B
D
F 3 C 2 1
G
L
1. Gate 2. T2 3. T1
J K
H I
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BT134-F
TO-126 Package Dimension, Forming
Dim. A B C D E F G H I J K L M
mm Min. 7.5 10.8 14.2 2.7 3.8 2.5 1.2 2.3 4.6 0.48 0.7 1.4 5.0 3.2 0.62 0.86 0.019 0.028 1.5 0.047 Typ. Max. 7.9 11.2 14.7 2.9 Min. 0.295 0.425 0.559 0.106
Inch Typ. Max. 0.311 0.441 0.579 0.114 0.150 0.098 0.059 0.091 0.181 0.024 0.034 0.055 0.197 0.126
A E B
D
F 3 C 2 1 M J H I
G
L
1. Gate 2. T2 3. T1
K
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